Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst
复制标题
使用图案化金属催化剂通过化学气相沉积制造位置控制碳纳米管场效应晶体管
DOI：
10.1143/jjap.42.4116
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Mizutani
中科院分区：
文献类型：
--
作者：
Y. Ohno;S. Iwatsuki;T. Hiraoka;T. Okazaki;S. Kishimoto;K. Maezawa;H. Shinohara;T. Mizutani
采用图案化催化剂和化学气相沉积技术制备了位置可控的碳纳米管场效应晶体管。使用铂和钴的双层金属作为催化剂。使用乙醇和氩气的混合物作为源气体对于获得具有良好特性的FET是有效的。在室温下观察到库仑振荡。76%的制造设备显示FET操作。通过施加高电压，具有金属纳米管的FET的特性得到改善。
Position-controlled carbon nanotube field effect transistors (FETs) have been fabricated by using patterned catalysts and chemical vapor deposition. A double-layer metal of platinum and cobalt was used as the catalyst. The use of a mixture of ethanol and argon as the source gas was effective for obtaining FETs with good characteristics. Coulomb oscillation was observed at room temperature. 76% of the fabricated devices showed FET operation. The characteristics of FETs with metallic nanotubes were improved by applying a high voltage.