Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium
Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium
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DOI：
10.1088/1367-2630/13/2/025012
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发表时间：
2011-02-21
影响因子：
3.3
通讯作者：
Becher, Christoph
中科院分区：
文献类型：
--
作者：
Neu, Elke;Steinmetz, David;Becher, Christoph
我们介绍了一种通过微波等离子体辅助化学气相沉积（CVD）生长在铱上制备高质量、空间隔离的纳米金刚石的工艺。我们进行光谱的单siliconvacancy（SiV）中心的纳米金刚石生长过程中产生的。该色心在室温下具有非常窄的零声子谱线，其波长可达0.7 nm。饱和时的单光子计数率高达4.8 Mcps，使这些SiV中心成为迄今为止最亮的金刚石单光子源。我们首次测量了单个SiV中心的精细结构，从而证实了所研究的色心的原子组成。
We introduce a process for the fabrication of high-quality, spatially isolated nano-diamonds on iridium via microwave-plasma-assisted chemical vapour deposition (CVD) growth. We perform spectroscopy of single siliconvacancy (SiV) centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV centres the brightest diamond-based single photon sources to date. We measure for the first time the fine structure of a single SiV centre, thus confirming the atomic composition of the investigated colour centres.