High rate deposition of μc-Si with plasma gun CVD
High rate deposition of μc-Si with plasma gun CVD
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DOI：
10.1016/0022-3093(96)00090-7
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发表时间：
1996-05
影响因子：
3.5
通讯作者：
N. Imajyo
中科院分区：
文献类型：
--
作者：
N. Imajyo
High rate deposition of microcrystalline silicon using direct current are plasma gun chemical vapor deposition was investigated. A sheet like plasma was produced using a DC are plasma gun and a magnetic field. An important feature of this plasma was that it was produced using high current and low voltage. By increasing the plasma density and flow rate of feed gas (silane) a deposition rate of 1.5 nm/s micro-crystalline silicon was achieved.
