SiO2 Insulation Layer Fabricated using RF Magnetron Facing Target Sputtering and Conventional RF Magnetron Sputtering
SiO2 Insulation Layer Fabricated using RF Magnetron Facing Target Sputtering and Conventional RF Magnetron Sputtering
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使用射频磁控管面向靶溅射和传统射频磁控溅射制备的 SiO2 绝缘层
DOI：
10.1143/jjap.40.4876
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发表时间：
2001
影响因子：
1.5
通讯作者：
M. Kawanishi
中科院分区：
文献类型：
--
作者：
S. Morohashi;Atsunori Matsuo;Toshihiro Hara;S. Tsujimura;M. Kawanishi
我们已经研究了SiO2绝缘层的沉积条件，如衬底靶长度，Ar压力和施加的RF功率密度，使用RF磁控管对靶溅射和常规RF溅射技术。利用射频磁控对靶溅射技术，在高沉积速率条件下制备了表面平整度良好的SiO2薄膜。
We have investigated the deposition conditions for a SiO2 insulation layer, such as the substrate-target length, Ar pressure and applied RF power density, using both RF magnetron facing target sputtering and the conventional RF sputtering techniques. We have fabricated an SiO2 layer having with a good surface smoothness under the high deposition rate condition using the RF magnetron facing target sputtering technique.