Static and dynamic response of multiple-quantum-well voltage-controlled bistable laser diodes
Static and dynamic response of multiple-quantum-well voltage-controlled bistable laser diodes
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多量子阱压控双稳态激光二极管的静态和动态响应
DOI：
10.1109/3.493013
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发表时间：
1996
影响因子：
2.5
通讯作者：
H. Iwamura
中科院分区：
文献类型：
--
作者：
H. Uenohara;R. Takahashi;Y. Kawamura;H. Iwamura
我们模拟了压控多量子阱(MQW)双稳激光器的静态和动态特性。为了研究可饱和吸收体在外加电场作用下的时间响应，我们进行了皮秒分辨率的泵浦-探测测量。得到的差分传输信号表明，随着外加电场的增加，可饱和吸收体载流子逃逸时间缩短。载流子分布的空间变化引起的场屏蔽效应和光生载流子引起的相空间填充也是一个重要因素。在时间响应测量的基础上，通过求解包含吸收饱和恢复时间响应的修正速率方程，设计了一种多量子阱双稳激光器，其可饱和吸收区域窄于10个/SPLµ/m，适用于获得低阈值器件。为了实现低开关功率和高开关速度，优化偏置条件和多量子阱结构是非常重要的。根据计算，我们可以预期关断时间小于10ps，重复率超过5 GHz。
We have simulated the static and dynamic characteristics of voltage-controlled multiple-quantum-well (MQW) bistable laser diodes. To investigate the time response of the saturable absorber under applied electric field, we performed pump-probe measurements with picosecond resolution. The obtained differential transmission signals indicate the reduction of the carrier escape time for the saturable absorber with increasing applied electric field. The field screening effect caused by spatial change of the carrier distribution is an important factor, as is phase space filling due to the photogenerated carriers. On the basis of the time response measurements, we have designed an MQW bistable laser by solving the modified rate equation including the recovery time response of the absorption saturation, A saturable absorption region narrower than 10 /spl mu/m is suitable for obtaining a low threshold device. To achieve low switching power and high switching speed, it is important to optimize the bias conditions and the MQW structures. We can expect a turn-off time of less than 10 ps, and a repetition rate of over 5 GHz from the calculations.