Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine
Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine
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使用叔丁基膦通过金属有机化学气相沉积生长的 AlGaInP/GaInP 量子阱激光器的连续波操作
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
S. Yuan
中科院分区：
文献类型：
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作者：
J. Dong;J. Teng;S. Chua;B. Foo;Yan;Liangdong Zhang;Hairong Yuan;S. Yuan
采用金属有机化学气相沉积技术，以叔丁基膦为磷前驱体，制备了应变AlGaInP/GaInP多量子阱激光结构，并制备了4 μm宽的脊波导激光器。获得了发射波长约670 nm的室温连续波激光。已经实现了一种劈裂激光芯片的单面输出功率超过18mw。结果表明，采用毒性较小的金属有机源叔丁基膦与常规使用的剧毒PH3并行制备AlGaInP红色激光器是可行的。
Strained AlGaInP/GaInP multiple-quantum-well laser structures have been grown by metalorganic chemical vapor deposition using teriarybutylphosphine as the phosphorus precursor and ridge waveguide lasers of 4 μm wide have been fabricated. Room temperature continuous-wave lasing has been obtained with an emission wavelength of about 670 nm. A single-facet output power of more than 18 mW has been achieved for an as-cleaved laser chip. It can be concluded that it is feasible to fabricate AlGaInP red lasers using less toxic metalorganic source tertiarybutylphosphine in parallel with conventionally used highly toxic PH3.