High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process
High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process
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DOI：
10.1021/acsami.6b09990
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发表时间：
2016-12-21
影响因子：
9.5
通讯作者：
Vuillaume, D.
中科院分区：
文献类型：
--
作者：
Benwadih, M.;Coppard, R.;Vuillaume, D.
报道了非晶态、溶胶凝胶法生长在塑料衬底上的铟镓锌氧化物晶体管，其栅电介质可印刷，电子迁移率为4.5 cm(2)/(V S)，在固体衬底(Si/SiO_2)上的迁移率为7 cm(2)/(V S)。这些性能是使用低温脉冲光退火技术获得的。与我们在塑料衬底上成功实现的溶胶-凝胶IGZO薄膜晶体管(TFT)的传统(炉或热板)退火工艺相比，紫外光脉冲光系统是一种创新的工艺。为了获得具有显著电学性能的IGZO TFT，对光子退火处理进行了优化。在这种脉冲紫外光退火膜上沉积的有机栅介质层也得到了优化。该技术对于在塑料衬底上制备非晶态IGZO薄膜晶体管具有很好的应用前景。
Amorphous, sol gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm(2)/(V s), as well as a mobility of 7 cm(2)/(V s) on solid substrate (Si/SiO2) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.