Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers
Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers
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DOI：
10.1063/1.3295700
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发表时间：
2010-01
影响因子：
4
通讯作者：
A. Crassous;V. Garcia;K. Bouzehouane;S. Fusil;A. Vlooswijk;G. Rispens;B. Noheda;M. Bibes;A. Barthé
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文献类型：
--
作者：
A. Crassous;V. Garcia;K. Bouzehouane;S. Fusil;A. Vlooswijk;G. Rispens;B. Noheda;M. Bibes;A. Barthé
铁电性在超薄薄膜中的持久性使其可用作隧道势垒。铁电隧道结用于探究隧穿电致电阻效应——与铁电势垒层中极化反转相关的电阻变化——这是由铁电性和量子力学隧穿之间的相互作用导致的。在此，我们在室温下使用压电力显微镜和导电探针原子力显微镜，通过其对钛酸铅超薄铁电薄膜中隧道电流的影响，展示了极化状态的电阻读出。通过3.6纳米的钛酸铅薄膜，隧穿电致电阻达到了50000%的值。
The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroelectric tunnel junctions are used to explore the tunneling electroresistance effect—a change in the electrical resistance associated with polarization reversal in the ferroelectric barrier layer—resulting from the interplay between ferroelectricity and quantum-mechanical tunneling. Here, we use piezoresponse force microscopy and conductive-tip atomic force microscopy at room temperature to demonstrate the resistive readout of the polarization state through its influence on the tunnel current in PbTiO3 ultrathin ferroelectric films. The tunnel electroresistance reaches values of 50 000% through a 3.6 nm PbTiO3 film.