Graphene Tamm plasmon-induced giant Goos–Hänchen shift at terahertz frequencies
Graphene Tamm plasmon-induced giant Goos–Hänchen shift at terahertz frequencies
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DOI：
10.3788/col201917.020007
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发表时间：
2019-02
影响因子：
3.5
通讯作者：
Jiao Tang;Jiao Xu;Zhiwei Zheng;H. Dong;Jun Dong;Shengyou Qian;Jun Guo;Leyong Jiang;Y. Xiang
中科院分区：
文献类型：
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作者：
Jiao Tang;Jiao Xu;Zhiwei Zheng;H. Dong;Jun Dong;Shengyou Qian;Jun Guo;Leyong Jiang;Y. Xiang
在这封信中，我们已经表明，在太赫兹频率下反射的光束的巨大古斯-汉臣位移可以通过使用复合结构来实现，其中单层石墨烯被涂覆在由电介质板隔开的一维光子晶体上。这种巨大的古斯-汉臣位移源于电场的增强，这是由于石墨烯和一维光子晶体之间的界面处的光学Tamm态的激发。结果表明，在这种结构中的Goos-Hanchen位移可以显着扩大负，并可以从负到正，由于石墨烯的导电性的可调谐性。此外，所提出的结构的古斯-汉臣位移是敏感的石墨烯的弛豫时间和顶层的厚度，使这种结构的一个很好的候选人，在太赫兹制度的动态可调光频移设备。
In this Letter, we have shown that a giant Goos–Hanchen shift of a light beam reflected at terahertz frequencies can be achieved by using a composite structure, where monolayer graphene is coated on one-dimensional photonic crystals separated by a dielectric slab. This giant Goos–Hanchen shift originates from the enhancement of the electrical field, owing to the excitation of optical Tamm states at the interface between the graphene and one-dimensional photonic crystal. It is shown that the Goos–Hanchen shift in this structure can be significantly enlarged negatively and can be switched from negative to positive due to the tunability of graphene’s conductivity. Moreover, the Goos–Hanchen shift of the proposed structure is sensitive to the relaxation time of graphene and the thickness of the top layer, making this structure a good candidate for a dynamic tunable optical shift device in the terahertz regime.