Self-assembly of three-dimensional Au inductors on silicon
Self-assembly of three-dimensional Au inductors on silicon
复制标题
硅上三维金电感的自组装
DOI：
10.1049/iet-map.2009.0442
复制
发表时间：
2010
影响因子：
1.7
通讯作者：
E. Yeatman
中科院分区：
文献类型：
--
作者：
M. Kiziroglou;A. Mukherjee;S. Vatti;A. Holmes;C. Papavassiliou;E. Yeatman
目前，将电感器集成到高频硅电路中的代价是品质因数 (Q) 较低，这主要是由于与底层基板的电磁相互作用。人们已经提出了各种高Q值电感器的制造方法，但与标准半导体工艺技术的兼容性差是一个常见问题。之前曾报道过一种涉及面内制造和垂直方向表面张力自组装的有前途的技术，用于铜电感器。这里，报道了该工艺的互补金属氧化物半导体（CMOS）兼容且无铅版本，具有改进的再现性，使用金作为电感器材料。制作并测试了 4 nH 蜿蜒电感器作为演示器，显示旋转时 Q 值显着增加。
Integration of inductors into high-frequency silicon circuits currently comes at the expense of a low-quality factor (Q), mainly because of electromagnetic interactions with the underlying substrate. Various fabrication methods for high Q inductors have been proposed, but poor compatibility with standard semiconductor process technology is a common problem. A promising technique involving in-plane fabrication and surface tension self-assembly to the vertical orientation has been previously reported for copper inductors. Here, a complementary metal–oxide–semiconductor (CMOS)-compatible and lead-free version of this process, with improved reproducibility, is reported, using Au as the inductor material. A 4 nH meander inductor is fabricated and tested as a demonstrator, showing significant increase of Q upon rotation.