Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates
Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates
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DOI：
10.1016/j.ceramint.2020.12.096
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发表时间：
2020-12
影响因子：
5.2
通讯作者：
Xiaokun Yang;Xuejian Du;Jie Liu;Rongrong Chen;Di Wang;Y. Le;Hongyan Zhu;Bo Feng;Jin Ma
中科院分区：
文献类型：
--
作者：
Xiaokun Yang;Xuejian Du;Jie Liu;Rongrong Chen;Di Wang;Y. Le;Hongyan Zhu;Bo Feng;Jin Ma
以电化学腐蚀法制备的纳米孔GaN为衬底，采用脉冲层沉积法（PLD）存款了掺Er的Ga 2 O3外延薄膜。GaN和Er掺杂β-Ga 2 O3薄膜之间的外延关系为Ga 2 O3（−201）<$GaN（0001）和Ga 2 O3 [010]<$GaN [-12-10]。与孔隙率为0%、~20%和~ 60%的外延GaN薄膜相比，孔隙率为~ 40%的外延GaN薄膜具有最好的晶体质量和光电性能，其禁带宽度为~4.89 eV。性能的提高应该是由于在蚀刻的基板中的纳米孔的存在，作为一个结果，提高晶体质量。Er掺杂Ga 2 O3薄膜的优异性能表明，Er掺杂Ga 2 O3薄膜在制备Ga 2 O3光电器件方面具有很大的潜力。
The nanoporous (NP) GaN wafers which were fabricated by electrochemical etching (EC) method were used as substrates to deposit Er-doped Ga2O3epitaxial films by pulsed layer deposition (PLD). The epitaxial relationship between the GaN and Er doped β-Ga2O3film was Ga2O3(−201) ‖ GaN (0001) with Ga2O3[010] ‖ GaN [-12-10]. Compared to the Er doped films on the epi-GaN wafers with the porosity of 0%, ~20% and ~60%, the β-Ga2O3film deposited on the wafer with a porosity of ~40%, which has an energy bandgap of ~4.89 eV, has the best crystal quality and optoelectronic properties. The performance enhancement should be due to improved crystalline quality as a result of the existence of nanopores in the etched substrates. The excellent properties of Er doped Ga2O3films indicated that the films have great potential to fabricate Ga2O3optoelectronic devices.