Deuterium retention in TiC and TaC doped tungsten under low-energy ion irradiation

Deuterium retention in TiC and TaC doped tungsten under low-energy ion irradiation
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DOI:
10.1088/0031-8949/2014/t159/014050
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发表时间:
2014-04
期刊:
影响因子:
2.9
通讯作者:
M. Zibrov;M. Mayer;E. Markina;K. Sugiyama;M. Betzenbichler;H. Kurishita;Y. Gasparyan;O. Ogorodnikova-O.
M. Zibrov;M. Mayer;E. Markina;K. Sugiyama;M. Betzenbichler;H. Kurishita;Y. Gasparyan;O. Ogorodnikova-O.
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
M. Zibrov;M. Mayer;E. Markina;K. Sugiyama;M. Betzenbichler;H. Kurishita;Y. Gasparyan;O. Ogorodnikova-O.

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研究了掺入碳化钛和碳化钽的再结晶增韧、细晶钨基材料中的氚保留问题。在310K左右的温度下,用2 0 0 eV D−1离子辐照到1×10 2 2~1×10 2 4D m−2注量范围内;在30 0~6 0 0K温度下,用38 eV D−1离子辐照到6×10 2 2~6×10 2 4D m−2注量范围内。在较低的辐照温度下,两种掺杂材料的氚存留量与纯钨的存留量相当,但TDS谱的形状及其随注量的演化不同。在600K和最高注量下,两种掺杂材料的氚存留率都高于再结晶和原始纯钨,这可以归因于碳化物的析出。
Deuterium retention in toughened, fine-grained, recrystallized tungsten-based materials doped either with titanium carbide or tantalum carbide was investigated. Samples were either irradiated by 200 eV D−1 ions to fluences in the range 1 × 1022–1 × 1024 D m−2 at a temperature of about 310 K or by 38 eV D−1 ions to fluences in the range 6 × 1022–6 × 1024 D m−2 at temperatures of 300 and 600 K. The deuterium inventory in the samples was examined by nuclear reaction analysis and thermal desorption spectroscopy (TDS). At low irradiation temperatures, deuterium retention in both doped materials was comparable to retention in pure tungsten (both recrystallized and as-received), while the shapes of TDS spectra and their evolution with the fluence were different. Deuterium retention in both doped materials at 600 K and at the highest fluence was higher than that in both recrystallized and as-received pure tungsten, and this can be attributed to the carbide precipitates.