Pyramid Array InGaN/GaN Core–Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes
Pyramid Array InGaN/GaN Core–Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes
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DOI：
10.7567/apex.6.072102
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发表时间：
2013-06
影响因子：
2.3
通讯作者：
Junjie Kang;Zhi Li;Hongjian Li;Zhiqiang Liu;Xiao Li;X. Yi;P. Ma;Hongwei Zhu;Guohong Wang
中科院分区：
文献类型：
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作者：
Junjie Kang;Zhi Li;Hongjian Li;Zhiqiang Liu;Xiao Li;X. Yi;P. Ma;Hongwei Zhu;Guohong Wang
采用高度均匀的多层石墨烯透明导电电极制备了金字塔阵列InGaN/GaN核壳式发光二极管。这种新型电极具有优异的光学、结构和电学性能。在本设计中，石墨烯将每个金字塔阵列连接成一个顶部窗口电极。电流驱动的金字塔阵列InGaN/GaN核壳LED在小电流注入下工作，并显示出明亮的电致发光。我们的结果表明，石墨烯在纳米或微米级器件中具有优异的电流扩展和透明导电性能。
Pyramid array InGaN/GaN core–shell light-emitting diodes (LEDs) were fabricated by using a highly homogeneous multilayer graphene transparent conducting electrode. This novel electrode exhibited excellent optical, structural, and electrical properties. In this design, graphene connected each pyramid array as a top window electrode. The current-driven pyramid array InGaN/GaN core–shell LED was operated at a low current injection and exhibited bright electroluminescence. Our results suggest that graphene offers excellent current spreading and transparent conductive properties for nano- or microscale devices.