Voltage noise of an amorphous MoxSi1-x film near the superconducting transition in magnetic fields
Voltage noise of an amorphous MoxSi1-x film near the superconducting transition in magnetic fields
复制标题
非晶 MoxSi1-x 薄膜在磁场中超导转变附近的电压噪声
DOI：
10.1143/jpsj.67.725
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发表时间：
1998
影响因子：
1.7
通讯作者：
S. Okuma
中科院分区：
文献类型：
--
作者：
N. Kokubo;T. Terashima;S. Okuma
本文研究了厚的非晶Mo x Si 1- x薄膜在熔点上下磁场中，电压噪声S V (f)在60年宽频率范围内（f =0.1 Hz-100 kHz）作为稳定电流的函数。在零电阻区附近观测到的低频（f≈0.1 ~ 10 Hz）噪声的来源主要是温度波动，磁通运动的贡献很小。相反，在较高频率（f≈10 Hz-100 kHz）的S V (f)似乎主要由磁通运动控制。这些结果与最近在yba2cu3o7 -δ薄膜上的实验结果进行了比较。
The voltage noise S V ( f ) in a thick amorphous Mo x Si 1- x film is studied over a broad frequency range spanning six decades ( f =0.1 Hz–100 kHz) in magnetic fields just above and below the melting field, as a function of a steady current. The origin of the low-frequency ( f ≈0.1–10 Hz) noise observed near the zero-resistance region is mainly due to temperature fluctuations and the contribution due to flux motion is very small. In contrast, S V ( f ) at higher frequencies ( f ≈10 Hz–100 kHz) appears to be dominated by the flux motion. These results are compared with recent experiments on YBa 2 Cu 3 O 7-δ films.