Separation-Dependent Electronic Transparency of Monolayer Graphene Membranes on III-V Semiconductor Substrates
Separation-Dependent Electronic Transparency of Monolayer Graphene Membranes on III-V Semiconductor Substrates
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DOI：
10.1021/nl101527e
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发表时间：
2010-09-01
期刊：
影响因子：
10.8
通讯作者：
Lyding, Joseph W.
中科院分区：
文献类型：
--
作者：
He, Kevin T.;Koepke, Justin C.;Lyding, Joseph W.
超高真空扫描隧道显微镜和第一原理计算已用于研究原位沉积在特高压劈裂的 GaAs(1 1 0) 和 InAs(1 1 0) 表面上的单层石墨烯纳米膜。观察到依赖于偏压的半透明效应，其中通过石墨烯单层清晰可见基板原子结构。统计数据分析和密度泛函理论计算表明，这种半透明现象是由于扫描隧道显微镜尖端将石墨烯膜推离其平衡位置并更靠近基底表面，导致它们的电子态混合。
Ultrahigh vacuum scanning tunneling microscopy and First-principles calculations have been carried out to study monolayer graphene nanomembranes deposited in situ onto UHV-cleaved GaAs(1 1 0) and InAs(1 1 0) surfaces. A bias-dependent semitransparency effect is observed in which the substrate atomic structure is clearly visible through the graphene monolayer. Statistical data analysis and density functional theory calculations suggest that this semitransparency phenomenon is due to the scanning tunneling microscope tip pushing the graphene membrane away from its equilibrium location and closer to the substrate surface, causing their electronic states to intermix.