Conducting ferroelectric domain walls emulating aspects of neurological behavior
Conducting ferroelectric domain walls emulating aspects of neurological behavior
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DOI：
10.1063/5.0124390
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发表时间：
2022-11
影响因子：
4
通讯作者：
A. Suna;O. E. Baxter;J. McConville;Abhinav Kumar;R. G. McQuaid;J. Gregg
中科院分区：
文献类型：
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作者：
A. Suna;O. E. Baxter;J. McConville;Abhinav Kumar;R. G. McQuaid;J. Gregg
锂离子电池薄膜电容器结构的电导率取决于导电180[公式：见正文]畴壁的密度，它穿过电极间的间隙，并在其相对于极化轴的倾角。这两种微结构特征可以通过施加电场来改变，但变化是时间依赖性的，并且在场去除时放松到不同范围的rexenes状态。因此，所测量的电导是电场和时间的复杂历史依赖函数。在这里，我们表明，在这个铁电系统中，微观结构变化的动力学的复杂性，可以产生运输行为，这是强烈的回忆，在关键的神经构建块，如突触。正极性和负极性的连续电压脉冲以取决于脉冲电压幅度和频率两者的方式逐渐增强或抑制域壁相关电导（类似于突触增强和抑制）。因此，突触尖峰频率依赖的可塑性，甚至是大脑中学习和记忆的特征艾宾浩斯遗忘行为，都可以被模仿。电导也可以根据施加到顶部和底部接触电极的设计的相同电压脉冲波形之间的时间差来改变，以能够模拟突触中的赫布和反赫布尖峰定时依赖性可塑性的方式。虽然这样的特征已经在其他种类的忆阻器中被看到并被开发，但是很少有人先前通过操纵导电铁电畴壁来实现。
The electrical conductivity of lithium niobate thin film capacitor structures depends on the density of conducting 180[Formula: see text] domain walls, which traverse the interelectrode gap, and on their inclination angle with respect to the polarization axis. Both microstructural characteristics can be altered by applying electric fields, but changes are time-dependent and relax, upon field removal, into a diverse range of remanent states. As a result, the measured conductance is a complex history-dependent function of electric field and time. Here, we show that complexity in the kinetics of microstructural change, in this ferroelectric system, can generate transport behavior that is strongly reminiscent of that seen in key neurological building blocks, such as synapses. Successive voltage pulses, of positive and negative polarity, progressively enhance or suppress domain wall related conductance (analogous to synaptic potentiation and depression), in a way that depends on both the pulse voltage magnitude and frequency. Synaptic spike-rate-dependent plasticity and even Ebbinghaus forgetting behavior, characteristic of learning and memory in the brain, can be emulated as a result. Conductance can also be changed according to the time difference between designed identical voltage pulse waveforms, applied to top and bottom contact electrodes, in a way that can mimic both Hebbian and anti-Hebbian spike-timing-dependent plasticity in synapses. While such features have been seen in, and developed for, other kinds of memristors, few have previously been realized through the manipulation of conducting ferroelectric domain walls.