Effect of Boron-doping on the Stress in CVD Diamond Thick Film
Effect of Boron-doping on the Stress in CVD Diamond Thick Film
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发表时间：
2008
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通讯作者：
Z. Dunwen
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作者：
Z. Dunwen
用电子辅助化学气相沉积(EACVD)方法在钼衬底上制备了掺硼金刚石厚膜.用X射线衍射仪研究了掺杂对CVD金刚石膜中应力的影响.结果表明，随着掺杂量的增加，CVD金刚石膜中的Sp_2碳含量增加，晶体尺寸减小.在成核面，当C2H5OH中的B_2O_3含量小于1000 mg/kg时，CVD金刚石膜中的应力为压应力，当B_2O_3在C_2H_5OH中的含量大于6000 mg/kg时，CVD金刚石膜中的应力为张应力.在生长表面上，当C_2H_5OH中B_2O_3含量大于10000 mg/kg时，薄膜中的拉应力较大。
Boron-doped diamond thick films were prepared using electron assisted chemical vapour deposition(EACVD) method on Mo substrates.The influence of doping on stress in CVD diamond films was investigated with X-ray diffraction.The results show that the sp2 carbon content will increase and the crystal size will decrease with the doping level increases.On the nucleation surface,the stress in CVD diamond films is compressive when the B2O3 consistency in C2H5OH is less than 1000 mg/kg,and the stress becomes tensile when the B2O3 consistency in C2H5OH is more than 6000 mg/kg.On the growth surface,the tensile stress in the films is high when the B2O3 consistency in C2H5OH is more than 10000 mg/kg.