Study for Improvement of Laser Induced Damage of 1064 nm AR Coatings in Nanosecond Pulse
Study for Improvement of Laser Induced Damage of 1064 nm AR Coatings in Nanosecond Pulse
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纳秒脉冲1064 nm增透膜激光损伤改善研究
DOI：
10.3807/josk.2013.17.1.001
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发表时间：
2013-02-01
影响因子：
--
通讯作者：
Wang, Zhanshan
中科院分区：
文献类型：
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作者：
Jiao, Hongfei;Cheng, Xinbing;Wang, Zhanshan
对于常规抛光的熔融石英基底，在表面的顶部形成约100nm深度的再沉积抛光层。密集嵌入再沉积抛光层中的抛光化合物是限制纳秒激光系统中传输元件的激光诱导损伤阈值（LIDT）的主要因素。以不同的方式采用化学蚀刻、超精密抛光和离子束蚀刻来消除基板上的这些吸收剂。之后，在同一批基材上沉积减反射（AR）涂层，然后通过1064 nm纳米脉冲激光进行测试。结果发现，在这些技术中，只有离子束蚀刻方法能够有效去除抛光化合物，并且在处理过程中不会引入额外的吸收剂，可以成功提高增透膜的LIDT。
For the conventionally polished fused silica substrate, an around 100 nm depth redeposition polishing layer was formed on the top of surface. Polishing compounds, densely embedded in the redeposition polishing layer were the dominant factor that limited the laser induced damage threshold (LIDT) of transmission elements in nanosecond laser systems. Chemical etching, super-precise polishing and ion beam etching were employed in different ways to eliminate these absorbers from the substrate. After that, Antireflection (AR) coatings were deposited on these substrates in the same batch and then tested by 1064 nm nano-pulse laser. It was found that among these techniques only the ion beam etching method, which can effectively remove the polishing compound and did not induce extra absorbers during the disposal process, can successfully improve the LIDT of AR coatings.