Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications
Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications
复制标题
MEMS 应用中 AlN 薄膜的压电特性研究
DOI：
10.3390/mi6091236
复制
发表时间：
2015-09-01
期刊：
影响因子：
3.4
通讯作者：
Ning, Jin
中科院分区：
文献类型：
--
作者：
Zhang, Meng;Yang, Jian;Ning, Jin
采用压电响应力显微镜（PFM）测量和有限元（FEM）模拟相结合的方法，研究了MEMS用AlN薄膜的压电系数d33。为了有效地表征样品的压电性能，采用PFM对无顶电极和有顶电极的样品进行了测试。为了获得数值解，在理论分析的基础上建立了PFM测量系统的等效模型。两个样品的模拟结果表明，由于衬底的夹紧效应和非理想的电场分布，有效测量值d33-test应小于本征值d33。系统地研究了它们对测量结果的影响。通过对比实验结果与仿真结果，给出了在该测试结构下，实际压电系数d33与测量结果d33-test之间的实验模型。提出了一种新颖有效的方法来消除衬底夹持和非理想电场分布的影响，提取AlN薄膜的实际d33值。
In this paper, the piezoelectric coefficient d33 of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy (PFM) measurement and finite element method (FEM) simulation. Both the sample without a top electrode and another with a top electrode were measured by PFM to characterize the piezoelectric property effectively. To obtain the numerical solution, an equivalent model of the PFM measurement system was established based on theoretical analysis. The simulation results for two samples revealed the effective measurement value d33-test should be smaller than the intrinsic value d33 due to the clamping effect of the substrate and non-ideal electric field distribution. Their influences to the measurement results were studied systematically. By comparing the experimental results with the simulation results, an experimental model linking the actual piezoelectric coefficient d33 with the measurement results d33-test was given under this testing configuration. A novel and effective approach was presented to eliminate the influences of substrate clamping and non-ideal electric field distribution and extract the actual value d33 of AlN thin films.