Silicone substrate with in situ strain relief for stretchable thin-film transistors
Silicone substrate with in situ strain relief for stretchable thin-film transistors
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DOI：
10.1063/1.3570661
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发表时间：
2011-03-21
影响因子：
4
通讯作者：
Lacour, Stephanie P.
中科院分区：
文献类型：
--
作者：
Graz, Ingrid M.;Cotton, Darryl P. J.;Lacour, Stephanie P.
我们已经制造了可伸缩薄膜晶体管和直接在具有局部和分级机械顺应性的工程硅基质上的互连。制造只涉及平面和标准加工。脆性有源器件材料在不可变形的弹性体区域(应变始终为1%)上形成图案，而互连则从“硬”弹性体平稳运行到“软”弹性体。并五苯薄膜晶体管承受高达13%的外加应变，不会出现电气退化和机械断裂。这种集成的方法为制造物理上可适应和可变形的电路开辟了有希望的选择。(C)2011年美国物理研究所。[DOI：10.1063/1.3570661]
We have manufactured stretchable thin-film transistors and interconnects directly onto an engineered silicone matrix with localized and graded mechanical compliance. The fabrication only involves planar and standard processing. Brittle active device materials are patterned on non deformable elastomer regions (strain < 1% at all times) while interconnects run smoothly from "stiff" to "soft" elastomer. Pentacene thin-film transistors sustain applied strain up to 13% without electrical degradation and mechanical fracture. This integrated approach opens promising options for the manufacture of physically adaptable and transformable circuitry. (C) 2011 American Institute of Physics. [doi:10.1063/1.3570661]