Giant magnetoresistive structures based on CrO2 with epitaxial RuO2 as the spacer layer
Giant magnetoresistive structures based on CrO2 with epitaxial RuO2 as the spacer layer
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DOI：
10.1063/1.1855532
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发表时间：
2005-05
影响因子：
3.2
通讯作者：
G. Miao;Arunava Gupta;H. Sims;W. Butler;S. Ghosh;G. Xiao
中科院分区：
文献类型：
--
作者：
G. Miao;Arunava Gupta;H. Sims;W. Butler;S. Ghosh;G. Xiao
采用化学气相沉积法在(100)-TiO2衬底上生长了RuO2/CrO2外延薄膜异质结构。用Co或其他外延CrO2层作为顶电极，制备了面内电流(CIP)和垂直面电流(CPP)巨磁阻堆栈。在RuO2沉积后，自然形成在CrO2表面的Cr2O3势垒不再存在，导致高导电界面的电阻至少降低了四个数量级。然而，只观察到非常有限的磁电阻(MR)。如此低的磁阻是由于在Cr2O_3与RuO_2混合时，当CrO_2O_3转变为金红石结构时，在CrO_2和RuO_2界面上出现了化学和磁性无序层。
Epitaxial ruthenium dioxide (RuO2)∕chromiumdioxide(CrO2) thin film heterostructures have been grown on (100)-TiO2 substrates by chemical vapor deposition. Both current-in-plane (CIP) and current-perpendicular-to-plane (CPP) giant magnetoresistive stacks were fabricated with either Co or another epitaxial CrO2 layer as the top electrode. The Cr2O3 barrier, which forms naturally on CrO2 surfaces, is no longer present after the RuO2 deposition, resulting in a highly conductive interface that has a resistance at least four orders of magnitude lower. However, only very limited magnetoresistance (MR) was observed. Such low MR is due to the appearance of a chemically and magnetically disordered layer at the CrO2 and RuO2 interfaces when Cr2O3 is transformed into rutile structures during its intermixing with RuO2.