High quality Fe3−δO4∕InAs hybrid structure for electrical spin injection
High quality Fe3−δO4∕InAs hybrid structure for electrical spin injection
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DOI：
10.1063/1.2713784
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发表时间：
2006-10
影响因子：
4
通讯作者：
M. Ferhat;K. Yoh
中科院分区：
文献类型：
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作者：
M. Ferhat;K. Yoh
采用分子束外延技术，以O2为活性氧源，在InAs（001）衬底上外延生长了Fe 3 −δ O 4（0 <$δ <$0.33）单晶薄膜。在最佳的生长条件下，原位真实的时间反射高能电子衍射图，沿着与非原位原子力显微镜，表明（001）Fe 3 −δ O 4可以在阶梯流动生长模式下生长，具有特征性的（2×2）R45表面重构。X射线光电子能谱表明，获得的铁氧化物的组成范围从Fe 3 O 4到γ-Fe 2 O3的可能性。用超导量子干涉仪在300 K下测量了铁基氧化物的磁性能，表明铁基氧化物在自旋电子学应用中具有良好的前景。
Single crystalline Fe3−δO4 (0⩽δ⩽0.33) films have been epitaxially grown on InAs (001) substrates by molecular beam epitaxy using O2 as source of active oxygen. Under optimum growth conditions, in situ real time reflection high-energy electron diffraction patterns, along with ex situ atomic force microscopy, indicate that (001) Fe3−δO4 can be grown under step-flow-growth mode with a characteristic (2×2)R45 surface reconstruction. X-ray photoelectron spectroscopy demonstrates the possibility of obtaining iron oxides with compositions ranging from Fe3O4 to γ-Fe2O3. Measurements with a superconducting quantum interference device magnetometer at 300K show good magnetic properties, suggesting that iron-based oxides may be promising for spintronic applications.