Increased Lateral Crystallization Width during Nickel Induced Lateral Crystallization of Amorphous Silicon Using Fluorine Implantation
Increased Lateral Crystallization Width during Nickel Induced Lateral Crystallization of Amorphous Silicon Using Fluorine Implantation
复制标题
使用氟注入镍诱导非晶硅横向结晶期间增加横向结晶宽度
DOI：
10.1149/1.2747324
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发表时间：
2007
影响因子：
3.9
通讯作者：
P. Ashburn
中科院分区：
文献类型：
--
作者：
M. Hakim;P. Ashburn
本文研究了氟离子注入对镍诱导非晶硅横向晶化的影响。为了区分氟和注入损伤的影响，氟注入直接进入a-Si或进入a-Si下方的缓冲氧化物。对于在500°C下退火20 h，两种类型的氟注入使横向结晶宽度增加65%，硅化镍沉淀物的密度降低5倍，并且改善了晶粒织构。相比之下，对于在550和600°C下退火20小时，两种类型的氟注入分别使横向结晶宽度减少29%和85%。氟注入到a-Si和缓冲氧化物中获得的相同结果表明，观察到的效果是由于氟的化学效应，而不是在a-Si中的注入损伤。在500°C下增加的结晶宽度通过在底部a-Si/SiO2界面处的无规结晶的抑制来解释。在550 ° C和600°C下结晶宽度的减小归因于氟的扩散和活化以及Si-F键的形成，使得a-Si更抵抗硅化物介导的相变。
This paper reports a study of the effect of fluorine implantation on the nickel-induced lateral crystallization of amorphous silicon. To distinguish the effects of the fluorine and the implantation damage, the fluorine implant is either made directly into the a-Si or into the buffer oxide below the a-Si. For a 20 h anneal at 500°C, both types of fluorine implant give a 65% increase in the lateral crystallization width, a five times reduction in the density of nickel silicide precipitates, and an improved grain texture. In contrast, for 20 h anneals at 550 and 600°C, both types of fluorine implant give 29% and 85% reductions in the lateral crystallization width, respectively. The identical results obtained for fluorine implantation into the a-Si and the buffer oxide indicates that the effects observed are due to chemical effects of the fluorine rather than implantation damage in the a-Si. The increased crystallization width at 500°C is explained by the suppression of random crystallization at the bottom a-Si/SiO2 interface. The reduced crystallization widths at 550 and 600°C are attributed to the diffusion and activation of fluorine and the formation of Si–F bonds making the a-Si more resistant to silicide-mediated phase transformation.