Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors
Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors
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DOI：
10.1016/j.cap.2012.05.008
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发表时间：
2012-11
影响因子：
2.4
通讯作者：
Y. G. Xiao;M. Tang;Y. Xiong;J. C. Li;C. P. Cheng;B. Jiang;H. Cai;Z. Tang;X. Lv;X. Gu;Y. Zhou
中科院分区：
文献类型：
--
作者：
Y. G. Xiao;M. Tang;Y. Xiong;J. C. Li;C. P. Cheng;B. Jiang;H. Cai;Z. Tang;X. Lv;X. Gu;Y. Zhou
