Stabilization of metastable ɛ-Fe2O3 thin films using a GaFeO3 buffer
Stabilization of metastable ɛ-Fe2O3 thin films using a GaFeO3 buffer
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DOI：
10.1063/1.4967393
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发表时间：
2016-11
影响因子：
3.2
通讯作者：
Trang Minh Nguyen Thai;D. Nguyen;N. Lee;J. Rhyee;Jonghyun Song;Heon-Jung Kim
中科院分区：
文献类型：
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作者：
Trang Minh Nguyen Thai;D. Nguyen;N. Lee;J. Rhyee;Jonghyun Song;Heon-Jung Kim
本文报道了一种在脉冲激光沉积中使用GaFeO_3(GfO)缓冲液稳定亚稳态ɛ-Fe_2O_3外延薄膜的简单而可靠的方法。等结构GFO缓冲液的使用扩大了薄膜生长的范围，即使具有不同的表面对称性，如Al_2O_3(0001)、SrTiO_3(111)和Y：ZrO_2(100)，也允许稳定在一系列衬底上。在这些衬底上生长的薄膜都是c轴取向的，具有典型的面内磁畴结构。这些缓冲薄膜的磁化强度在350K表现出相当大的磁各向异性，特别是在Y：ZrO2(100)衬底上生长的薄膜的面内磁化强度比其他情况下要大得多。ɛ-Fe_2O_3的异质结构在e-Fe_2O_3磁性和多铁性器件中的应用前景看好，因为它提供了更大的生长窗口，并为优化薄膜性能提供了一种有效的手段，而不是简单地用Fe替代Ga。
This paper reports a simple and robust route to stabilize metastable ɛ-Fe2O3 as an epitaxial thin film using a GaFeO3 (GFO) buffer in pulsed laser deposition. The use of an isostructural GFO buffer widens the range of film growth, allowing for stabilization on a range of substrates even with different surface symmetries, such as Al2O3 (0001), SrTiO3 (111), and Y:ZrO2 (100). All films grown on these substrates were c-axis oriented with the characteristic in-plane domain structures. Magnetization of these buffered thin films showed considerable magnetic anisotropy at 350 K. In particular, in-plane magnetization was found to be relatively larger in the films grown on the Y:ZrO2 (100) compared to the other cases. Heterostructuring ɛ-Fe2O3 on GFO is promising in the applications of e-Fe2O3 for magnetic and multiferroic devices in that it provides a larger growth window and an effective means to optimize the film properties beyond the simple substitution of Fe with Ga.