A broadband and miniaturized V-band PHEMT frequency doubler
A broadband and miniaturized V-band PHEMT frequency doubler
复制标题
宽带小型化 V 波段 PHEMT 倍频器
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
T. Nakagawa
中科院分区：
文献类型：
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作者：
B. Piernas;H. Hayashi;K. Nishikawa;K. Kamogawa;T. Nakagawa
我们展示了使用 0.15 μm GaAs 赝晶 HEMT 和三维 (3-D) MMIC 技术制造的 V 波段倍频器的设计和测量性能。由于使用了改进的 180/spl deg/rat-race 混合技术，倍频器在大带宽上表现出高频谱纯度。在 31.736 GHz 频率范围内实现了优于 30 dB 的隔离度，在 31.5 GHz 至 37.5 GHz 之间实现了优于 35 dB 的基频抑制。对于 14 dBm 的输入功率，在 32.5 GHz 测量的转换损耗为 8.5 dB。宽带光谱纯度和 1 mm2 的小尺寸使其适合实现高质量和广泛可调的 V 波段频率源。为毫米波无线通信系统的未来发展，包括频率源在内的单芯片V波段收发器的制造提供了良好的前景。
We present the design and measured performances of a V-band frequency doubler fabricated using 0.15 μm GaAs pseudomorphic HEMTs and the three-dimensional (3-D) MMIC technology. Thank to the use of an improved 180/spl deg/ rat-race hybrid, the frequency doubler exhibits high spectral purity over a large bandwidth. Isolation better than 30 dB is achieved on a frequency range from 31.736 GHz and fundamental frequency rejection better than 35 dB is achieved between 31.5 GHz and 37.5 GHz. Conversion loss measured at 32.5 GHz is 8.5 dB for an input power of 14 dBm. Both the broadband spectral purity and the small size of 1 mm2 make it suitable for the realization of high-quality and widely tunable V-band frequency sources. For the future developments of millimeter-wave wireless communication systems, it offers good perspectives toward the fabrication of single-chip V-band transceiver including the frequency source.