Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique
Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique
复制标题
采用直拉技术自动生长具有恒定轴向梯度的 Si1−xGex 单晶
DOI：
10.1002/crat.201900097
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
J. Winkler
中科院分区：
文献类型：
--
作者：
N. Abrosimov;V. Kurlov;R. Schewski;J. Winkler
这项贡献介绍了在生长过程中通过自动控制晶体形状来生长具有恒定组成梯度的Si1−xGex晶体，用于X射线或γ衍射光学。其核心思想是通过在主晶体生长阶段不断减小晶体直径来实现恒定的浓度梯度。为此，已经提出了一个概念，用于适当规划符合所有技术要求的半径轨迹。用自动控制系统生长了Si1−xGex单晶，其梯度在0.10~0.16at%cm−1之间。
This contribution presents the growth of Si1−xGex crystals with constant gradient of composition for X‐ray or γ‐ray diffraction optics using automated control of the crystal shape during the growth process. The key idea is to achieve a constant concentration gradient by continuously decreasing the crystal diameter during the main crystal growth phase. For this purpose a concept has been developed for a proper planning of the radius trajectory matching all technological requirements. Si1−xGex single crystals with constant gradients between 0.10 and 0.16 at% cm−1 have been grown using an automated control system.