Scanning probe microscopy for testing ultrafast electronic devices
Scanning probe microscopy for testing ultrafast electronic devices
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用于测试超快电子设备的扫描探针显微镜
DOI：
10.1007/bf00820151
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发表时间：
1996
影响因子：
3
通讯作者：
D. Bloom
中科院分区：
文献类型：
--
作者：
A. S. Hou;B. Nechay;F. Ho;D. Bloom
扫描力显微镜已发展成为一种实用的、非接触式的探测技术，用于测量集成器件和电路内部节点处的电压波形。动态电压对比度实现了高的空间和时间分辨率。讨论了影响系统带宽、电压灵敏度和空间分辨率的因素。介绍了硅和砷化镓电路的时域和频域测量。
Scanning force microscopy has been developed as a practical, non-contact probing technique for measuring voltage waveforms at internal nodes of integrated devices and circuits. Dynamic voltage contrast is achieved with high spatial and temporal resolution. The factors contributing to system bandwidth, voltage sensitivity and spatial resolution are discussed. Time-domain and frequency-domain measurements of silicon and gallium arsenide circuits are presented.