Current-induced switching of domains in magnetic multilayer devices
Current-induced switching of domains in magnetic multilayer devices
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磁性多层器件中电流诱导的磁畴切换
DOI：
10.1126/science.285.5429.867
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发表时间：
1999-08-06
期刊：
影响因子：
56.9
通讯作者：
Buhrman, RA
中科院分区：
文献类型：
--
作者：
Myers, EB;Ralph, DC;Buhrman, RA
在钴/铜/钴三明治结构中观察到磁矩方向的电流感应开关，电流垂直流过层。通过施加适当符号的电流脉冲，可以在稳定的平行和反平行配置之间可控地操纵相邻钴层中的磁畴。这些观测结果与自旋极化电流在磁性金属和非磁性金属界面上施加力矩的预言雅阁，这是由于传导电子和磁矩之间的局域交换相互作用造成的。
Current-induced switching in the orientation of magnetic moments is observed in cobalt/copper/cobalt sandwich structures, for currents flowing perpendicularly through the Layers. Magnetic domains in adjacent cobalt layers can be manipulated controllably between stable parallel and antiparallel configurations by applying current pulses of the appropriate sign. The observations are in accord with predictions that a spin-polarized current exerts a torque at the interface between a magnetic and nonmagnetic metal, due to Local exchange interactions between conduction electrons and the magnetic moments.