Ionization‐enhanced solid phase epitaxy of amorphous silicon with boron impurities
Ionization‐enhanced solid phase epitaxy of amorphous silicon with boron impurities
复制标题
含硼杂质非晶硅的电离增强固相外延
DOI：
10.1063/1.99117
复制
发表时间：
1988
影响因子：
4
通讯作者：
R. Walser
中科院分区：
文献类型：
--
作者：
W. Park;M. Becker;R. Walser
我们首次对（100）硅固相外延速度与注入硼杂质NB浓度的函数关系进行了高分辨率激光干涉测量。在所有测量温度（450-550 °C）下，对于所有NB<5×1019 cm−3的情况，速度的分数增加等于无量纲比NB/Ni，其中Ni是热激活因子。这一结果与所有模型对杂质对固相外延生长影响的预测不一致。
We have made the first high‐resolution, laser interferometric measurements of the functional dependence of the velocity of (100) silicon solid phase epitaxy on the concentration of implanted boron impurities NB. At all measurement temperatures (450–550 °C), and for all NB<5×1019 cm−3 the fractional increase in the velocity was identically equal to the dimensionless ratio NB/Ni, where Ni is a thermally activated factor. This result disagrees with the predictions of all models for the effect of impurities on solid phase epitaxial growth.