Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride
Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride
复制标题
宽禁带半导体中的低频和 1/f 噪声：碳化硅和氮化镓
DOI：
10.1049/ip-cds:20020328
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
M. Khan
中科院分区：
文献类型：
--
作者：
M. Levinshtein;S. Rumyantsev;M. Shur;R. Gaska;M. Khan
本文综述了宽带隙半导体和宽带隙半导体器件低频噪声的实验和理论研究结果。这些系统中低频噪声的不寻常特征包括SiC和SiC基器件中极低的噪声水平以及GaN基薄膜和GaN基场效应晶体管（FET）中噪声水平的大差异（GaN基FET中的噪声小得多）。作者还报道了在SiC和GaN基材料和器件中产生的复合噪声。
The results of experimental and theoretical studies of low-frequency noise in wide-bandgap semiconductors and wide-band-gap semiconductor devices are reviewed. The unusual features of the low-frequency noise in these systems include an extremely low level of noise in SiC and SiC-based devices and a large difference in the noise level in GaN-based films and GaN-based field effect transistors (FETs) (with the noise being much smaller in GaN-based FETs). The authors also report on the generation recombination noise in SiC and GaN-based materials and devices.