Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates
Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates
复制标题
用于制备半绝缘 GaN 衬底的掺铁厚 GaN 层的生长
DOI：
10.1143/jjap.44.l1072
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发表时间：
2005
影响因子：
1.5
通讯作者：
A. Koukitu
中科院分区：
文献类型：
--
作者：
Y. Kumagai;K. Takemoto;H. Murakami;A. Koukitu
采用 GaCl、NH3 和 FeCl2 作为源气体，在 (0001) 蓝宝石和 (111)A GaAs 衬底上进行 Fe 掺杂厚 GaN 层的气相外延，旨在制备半绝缘 (SI) GaN 衬底。在蓝宝石上，GaN 层的电阻率随着 FeCl2 输入分压的增加而增加。通过补偿背景施主，成功生长了室温下电阻率为 3.0×109 Ω cm 的 12 µm 厚的 SI GaN 层。相比之下，即使使用与蓝宝石衬底上相同的生长条件，在GaAs衬底上生长的GaN层的电阻率仍然很低（大约10-2Ωcm）。二次离子质谱 (SIMS) 测量表明，由于衬底退化而导致 As 蒸气物质的存在，阻碍了 Fe 融入 GaN。
Vapor-phase epitaxy of Fe-doped thick GaN layers was performed using GaCl, NH3 and FeCl2 as source gases on (0001) sapphire and (111)A GaAs substrates with the aim of preparing semi-insulating (SI) GaN substrates. On sapphire, the resistivity of the GaN layer increased with increasing FeCl2 input partial pressure. A 12-µm-thick SI GaN layer showing a resistivity of 3.0×109 Ω cm at room temperature was successfully grown by compensating for background donors. In contrast, the resistivity of the GaN layers grown on the GaAs substrate remained low (on the order of 10-2 Ω cm) even though the same growth conditions were used as on the sapphire substrate. Secondary ion mass spectroscopy (SIMS) measurements suggested that the presence of As vapor-species caused by the degradation of the substrate hindered Fe from becoming incorporated into GaN.