Growth of Si0.75Ge0.25 alloy nanowires in a separated H-field by microwave processing
Growth of Si0.75Ge0.25 alloy nanowires in a separated H-field by microwave processing
复制标题
DOI：
10.1063/1.3143232
复制
发表时间：
2009-05
影响因子：
4
通讯作者：
C. Dube;S. Kashyap;D. Dube;D. Agarwal
中科院分区：
文献类型：
--
作者：
C. Dube;S. Kashyap;D. Dube;D. Agarwal
本文提出了一种快速生长Si0.75Ge0.25合金纳米线的新技术，通过在工作频率为2.45 GHz、∼300W的TE011型单模圆柱谐振腔中加工成分，在900°C不到10min内生长出纳米线。通过对纳米线的微观结构、晶体结构和X射线光电子能谱的研究，确定了纳米线的尺寸、晶体结构和成分。认为纳米线的生长是由于电磁场辅助的形态转变所致。
This paper presents a rapid and novel technique of growing nanowires of Si0.75Ge0.25 alloy at 900 °C in less than 10 min by processing the constituents in a TE011 single mode cylindrical resonant cavity, operated at 2.45 GHz and ∼300 W. The microstructural, crystal structural, and x-ray photoelectron spectroscopic studies of the nanowires have been carried out to establish their dimensions, crystallographic structure, and composition, respectively. It is proposed that the growth of nanowires is due to electromagnetic field assisted morphological transformation.