Luminescence properties of a novel red-emitting phosphor LaBMO 6 : Pr 3+ (M = W, Mo)

Luminescence properties of a novel red-emitting phosphor LaBMO 6 : Pr 3+ (M = W, Mo)
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DOI:
10.1016/j.optmat.2017.03.002
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发表时间:
2017-04
期刊:
影响因子:
3.9
通讯作者:
F. Xiong;Hongyi Lin;Z. Ma;Y. P. Wang;Haifeng Lin;X. Meng;H. Shen;W. Z. Zhu
F. Xiong;Hongyi Lin;Z. Ma;Y. P. Wang;Haifeng Lin;X. Meng;H. Shen;W. Z. Zhu
中科院分区:
材料科学3区
文献类型:
--
作者:
F. Xiong;Hongyi Lin;Z. Ma;Y. P. Wang;Haifeng Lin;X. Meng;H. Shen;W. Z. Zhu

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通过空气中的常规固相反应合成了纯相的新型蓝色 InGaN 芯片红光荧光粉 Pr3+: LaBMO6(M = W, Mo),并研究了该荧光粉在白光 LED 中的光致发光性能。通过X射线衍射对合成的荧光粉进行了表征;漫反射光谱、光致发光激发和发射光谱、国际照明委员会 (CIE) 色度坐标和温度相关发射光谱。在 445 nm 激发下,Pr3+ 掺杂的 LaBMO6(M = W, Mo) 中观察到约 575–625 nm 的橙红色发射带。观察到 Pr3+ 掺杂的 LaBMoO6 中的荧光浓度猝灭,计算出 Pr3+ 离子之间能量转移的临界距离为 8.369 nm。 Pr3+掺杂LaBMoO6的CIE色品坐标位于红色光谱区,随温度变化的发光光谱表明Pr3+掺杂LaBMoO6表现出良好的热稳定性。所有结果都表明所开发的 Pr3+ 掺杂 LaBMO6(M = W, Mo) 是一种新型红色荧光粉。
A novel blue InGaN-chip-based red-emitting phosphor Pr3+: LaBMO6(M = W, Mo) in pure phase were synthesized via conventional solid-state reaction in air and the photoluminescence properties of the phosphor were investigated for the application in white LEDs. The as-synthesized phosphors were characterized by the X-ray diffraction; diffuse reflection spectra, photoluminescence excitation and emission spectra, the Commission International de L'Eclairage (CIE) chromaticity coordinates and temperature-dependent emission spectra. Orangish red emission band around 575–625 nm was observed in Pr3+-doped LaBMO6(M = W, Mo) upon 445 nm excitation. Fluorescence concentration quenching in Pr3+-doped LaBMoO6were observed and the critical distance between Pr3+ions for energy transfer was calculated to be 8.369 nm. The CIE chromaticity coordinates of Pr3+-doped LaBMoO6were located in the red spectral region and the temperature-dependent luminescence spectra indicated that Pr3+-doped LaBMoO6show good thermal stability. All results demonstrated the developed Pr3+-doped LaBMO6(M = W, Mo) was a novel red phosphor.