Measurements of Permittivity and Dielectric Loss Tangent of High Resistivity Float Zone Silicon at Microwave Frequencies
Measurements of Permittivity and Dielectric Loss Tangent of High Resistivity Float Zone Silicon at Microwave Frequencies
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微波频率下高阻浮区硅的介电常数和介电损耗角正切测量
DOI：
10.1109/mikon.2006.4345377
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
T. Claussen
中科院分区：
文献类型：
--
作者：
J. Krupka;J. Breeze;N. Alford;A. Centeno;L. Jensen;T. Claussen
用介质谐振器技术在微波频率下测量了10 ~ 380 K温度范围内区熔高阻硅的介电常数的真实的部分和介电损耗角正切。介电常数的真实的部分被证明是与频率无关的，并且介电损耗角正切随频率的减小被证明不完全与频率的倒数成比例。在低于25 K的温度下，其中所有的自由载流子被冻结的损耗角正切值的顺序为10-4的测量。
Real part of permittivity and the dielectric loss tangent of float zone high resistivity Silicon were measured at microwave frequencies at temperatures from 10 K up to 380 K employing dielectric resonator technique. The real part of permittivity proved to be frequency independent and the decrease in dielectric loss tangent versus frequency proved to be not entirely proportional to the inverse of frequency. At temperatures below 25 K where all free carriers are frozen-out loss tangents values the order of 10-4 were measured.