Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide -: art. no. 113524
Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide -: art. no. 113524
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DOI：
10.1063/1.2139831
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发表时间：
2005-12-01
影响因子：
3.2
通讯作者：
Hallén, A
中科院分区：
文献类型：
--
作者：
Alfieri, G;Monakhov, EV;Hallén, A
用深能级瞬态谱（DLTS）研究了1.2MeV质子注入和15 MeV电子辐照后掺氮4 H-SiC外延层中深能级的能量位置和热稳定性。在100至1200 ℃的温度下以50 ℃的步长进行等时退火。的DLTS测量，这是在从120至630 K的温度范围内进行的每个退火步骤后，揭示了位于导带边缘（E-C）以下的能量范围为0.45-1.6 eV的10个电子陷阱的存在。在这十个能级中，仅在质子注入后才观察到分别在E-c以下0.69、0.73和1.03 eV处的三个陷阱。已经进行了这些水平的剂量依赖性和深度分布研究。比较实验数据与计算机模拟的注入和缺陷的配置文件，有人建议，这三个新的水平，以前没有在文献中报道，是氢相关的。特别地，E-c-0.73 eV能级显示出非常窄的深度分布，局限于注入轮廓内，并且它最有可能源自仅涉及一个H原子的缺陷。(c)2005年美国物理学会。
Using deep level transient spectroscopy (DLTS), we have studied the energy position and thermal stability of deep levels in nitrogen doped 4H-SiC epitaxial layers after 1.2 MeV proton implantation and 15 MeV electron irradiation. Isochronal annealing was performed at temperatures from 100 to 1200 degrees C in steps of 50 degrees C. The DLTS measurements, which were carried out in the temperature range from 120 to 630 K after each annealing step, reveal the presence of ten electron traps located in the energy range of 0.45-1.6 eV below the conduction band edge (E-c). Of these ten levels, three traps at 0.69, 0.73, and 1.03 eV below E-c, respectively, are observed only after proton implantation. Dose dependence and depth profiling studies of these levels have been performed. Comparing the experimental data with computer simulations of the implantation and defects profiles, it is suggested that these three new levels, not previously reported in the literature, are hydrogen related. In particular, the E-c-0.73 eV level displays a very narrow depth distribution, confined within the implantation profile, and it originates most likely from a defect involving only one H atom. (c) 2005 American Institute of Physics.