Hydrogen passivation of the oxygen‐related thermal‐donor defect in silicon
Hydrogen passivation of the oxygen‐related thermal‐donor defect in silicon
复制标题
硅中与氧相关的热供体缺陷的氢钝化
DOI：
10.1063/1.96697
复制
发表时间：
1986
影响因子：
4
通讯作者：
S. Hahn
中科院分区：
文献类型：
--
作者：
N. Johnson;S. Hahn
扩散电阻测量和深能级瞬态谱都表明，氢化中和了n型硅中与氧相关的热施主缺陷。浅施主掺杂剂的氢中和（例如，磷）也进行了说明。考虑浅施主钝化的模型被应用于解释氢和热施主之间的相互作用。
It is demonstrated with both spreading resistance measurements and deep level transient spectroscopy that hydrogenation neutralizes the oxygen‐related thermal‐donor defect in n‐type silicon. Hydrogen neutralization of shallow‐donor dopants (e.g., phosphorus) is also illustrated. A model which accounts for shallow‐donor passivation is applied to explain the interaction between hydrogen and thermal donors.