Adiabatic wavelength redshift by dynamic carrier depletion using p-i-n-diode loaded photonic crystal waveguides
Adiabatic wavelength redshift by dynamic carrier depletion using p-i-n-diode loaded photonic crystal waveguides
复制标题
使用 p-i-n 二极管加载光子晶体波导通过动态载流子耗尽实现绝热波长红移
DOI：
10.1103/physreva.97.033818
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发表时间：
2018
影响因子：
2.9
通讯作者：
Baba T.
中科院分区：
文献类型：
--
作者：
Kondo K.;Baba T.
我们证明了一个绝热波长红移使用动态载流子耗尽。自由载流子首先通过控制脉冲的双光子吸收被诱导，然后被形成在Si光子晶体波导上的反向偏置p-i-n二极管提取，导致载流子快速耗尽。一个共同传播的信号脉冲是红移的折射率随之增加。我们用泵浦-探测方法对载流子耗尽的动力学进行了实验研究，并探索了产生绝热红移的合适条件。观察到了信号的红移，并证实其起源于动态载流子耗尽。实验测得红移为0.21 nm。
We demonstrate an adiabatic wavelength redshift using dynamic carrier depletion. Free carriers are first induced through two-photon absorption of a control pulse and then extracted by a reverse-biasedp-i-ndiode formed on a Si photonic crystal waveguide, resulting in rapid carrier depletion. A copropagating signal pulse is redshifted by the consequent increase in refractive index. We experimentally evaluated the dynamics of the carrier depletion by the pump-probe method and explored suitable conditions for adiabatic redshift. The signal's redshift was observed, and was confirmed to originate in the dynamic carrier depletion. The redshift was experimentally determined as 0.21 nm.