Tunable Electrical Conductivity in Metal-Organic Framework Thin-Film Devices
Tunable Electrical Conductivity in Metal-Organic Framework Thin-Film Devices
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DOI：
10.1126/science.1246738
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发表时间：
2014-01-03
期刊：
影响因子：
56.9
通讯作者：
Allendorf, Mark D.
中科院分区：
文献类型：
--
作者：
Talin, A. Alec;Centrone, Andrea;Allendorf, Mark D.
我们报告了一种在金属有机框架（mof）中实现可调导电性的策略，其中纳米孔被氧化还原活性的共轭客体分子浸润。该方法是用Cu-3(BTC)(2)（也称为HKUST-1； BTC，苯-1,3,5-三羧酸）浸润分子7,7,8,8-四氰喹诺多二甲烷（TCNQ）的MOF薄膜装置来证明的。可调的，空气稳定的电导率超过6个数量级，价值高达每米7西门子。光谱数据和第一性原理模型表明，电导率源于TCNQ客体分子桥接框架中的双核铜桨轮，导致二聚体Cu亚基之间的强电子耦合。这些导电多孔mof可以应用于共形电子器件、可重构电子器件和传感器。
We report a strategy for realizing tunable electrical conductivity in metal-organic frameworks (MOFs) in which the nanopores are infiltrated with redox-active, conjugated guest molecules. This approach is demonstrated using thin-film devices of the MOF Cu-3(BTC)(2) (also known as HKUST-1; BTC, benzene-1,3,5-tricarboxylic acid) infiltrated with the molecule 7,7,8,8-tetracyanoquinododimethane (TCNQ). Tunable, air-stable electrical conductivity over six orders of magnitude is achieved, with values as high as 7 siemens per meter. Spectroscopic data and first-principles modeling suggest that the conductivity arises from TCNQ guest molecules bridging the binuclear copper paddlewheels in the framework, leading to strong electronic coupling between the dimeric Cu subunits. These ohmically conducting porous MOFs could have applications in conformal electronic devices, reconfigurable electronics, and sensors.