Structures, compositions, and optical properties of ZnCr2O4 films grown epitaxially on c-sapphire by pulsed laser deposition
Structures, compositions, and optical properties of ZnCr2O4 films grown epitaxially on c-sapphire by pulsed laser deposition
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脉冲激光沉积在 c 型蓝宝石上外延生长 ZnCr2O4 薄膜的结构、成分和光学性能
DOI：
10.1016/j.apsusc.2019.01.039
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发表时间：
2019-05
影响因子：
6.7
通讯作者：
He Yunbin
中科院分区：
文献类型：
--
作者：
Wang Qile;Chen Jian;Lu Hao;Huang Pan;Wang Jiabin;Li Mingkai;Lu Yinmei;Chang Gang;Feng Zhe Chuan;He Yunbin
利用脉冲激光沉积(PLD)技术，采用ZCO陶瓷靶材和不同的沉积氧压，首次在经济型蓝宝石衬底上外延生长了高质量的ZnCr2O4薄膜。X射线衍射结果表明，所制备的ZCO薄膜由单一的尖晶石相组成，且与蓝宝石衬底ZCO(1 1 1)||Al_2O_3(0 0 0 1)和ZCO[0 1 −1]||Al_2O_3[1 −1 0]分别呈面外和面内取向。由于(1 1 1)-ZCO单晶蓝宝石的磁区匹配误差为0.015%，获得了高质量的(2 2 2)摇摆曲线半宽度为∼0.0 7°，φ扫描半宽度为∼1.85°的高质量外延。此外，薄膜表面非常光滑，最小均方根粗糙度为0.585 nm。随着沉积氧压的增加，薄膜中的锌铬原子比从0.316线性增加到0.585，同时薄膜的禁带宽度也从3.61 eV增加到3.87 eV。随着沉积氧分压的升高，薄膜的带隙变宽，主要是由于阴阳离子间相互作用增强，氧空位减少。我们的工作为高质量ZCO薄膜的外延生长提供了一种可行而经济的解决方案，在此基础上可以进一步探索ZCO的基本性质和工艺应用。
High-quality ZnCr2O4(ZCO) thin films were epitaxially grown on economicalc-sapphire substrates by pulsed laser deposition (PLD) for the first time, using a ZCO ceramic target and various deposition oxygen pressures. X-ray diffraction results revealed that the as-grown ZCO films consisted of a single spinel phase, and exhibited out-of-plane and in-plane orientations with respect to thec-sapphire substrate of ZCO (1 1 1)||Al2O3(0 0 0 1) and ZCO [0 1 −1]||Al2O3[1 −1 0], respectively. Due to domain matching with a tiny misfit of 0.015%, high-quality epitaxy of (1 1 1)-ZCO onc-sapphire was achieved with typical (2 2 2) rocking-curve half width of ∼0.07° andφ-scan half width of ∼1.85°. Moreover, the films exhibited very smooth surface with a minimum root-mean-square roughness of 0.585 nm. As the deposition oxygen pressure was increased, the atomic ratio of Zn/Cr in the ZCO films was found to increase linearly from 0.316 to 0.585, while the bandgap of the ZCO films increased simultaneously from 3.61 eV to 3.87 eV. The widening of bandgap was attributed to the enhancement of cations-anions interaction and reduction of oxygen vacancies with increasing deposition oxygen pressure. Our work provides a feasible and economical solution for the epitaxial growth of high-quality ZCO films, based on which fundamental properties and technological applications of ZCO can be further explored.
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