Analytical study of electrostatic ion beam traps
Analytical study of electrostatic ion beam traps
复制标题
静电离子束陷阱的分析研究
DOI：
10.1103/physrevstab.13.114001
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发表时间：
2010
影响因子：
--
通讯作者：
P. Indelicato
中科院分区：
文献类型：
--
作者：
A. Vallette;P. Indelicato
使用静电离子束阱需要在电极上设置许多电势（在我们的情况下为10个），使得调谐比使用四极阱困难得多。为了获得最佳的捕获条件，需要给出阱内静电势的解析公式。本文提出了一种计算任意轴对称电极组中静电势解析表达式的一般方法。我们使用保角映射来简化边界的几何形状。然后在简单几何空间中进行计算。我们表明，这种方法，提供了良好的精度，允许获得的电位轴上作为一个分析函数的电位施加到电极，从而导致快速，准确和有效的计算。最后，我们提出的稳定性地图取决于潜力，使我们能够找到良好的捕获条件氧4+在更高的能量比什么已经实现了到现在为止。
The use of electrostatic ion beam traps require to set many potentials on the electrodes (ten in our case), making the tuning much more difficult than with quadrupole traps. In order to obtain the best trapping conditions, an analytical formula giving the electrostatic potential inside the trap is required. In this paper, we present a general method to calculate the analytical expression of the electrostatic potential in any axisymmetric set of electrodes. We use conformal mapping to simplify the geometry of the boundary. The calculation is then performed in a space of simple geometry. We show that this method, providing excellent accuracy, allows to obtain the potential on the axis as an analytic function of the potentials applied to the electrodes, thus leading to fast, accurate and efficient calculations. We conclude by presenting stability maps depending on the potentials that enabled us to find the good trapping conditions for oxygen 4+ at much higher energies than what has been achieved until now.