Novel semiconducting quinone for air-stable n-type organic field-effect transistors.
Novel semiconducting quinone for air-stable n-type organic field-effect transistors.
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DOI：
10.1021/am1001794
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发表时间：
2010-04
影响因子：
9.5
通讯作者：
Masashi Mamada;D. Kumaki;J. Nishida;S. Tokito;Y. Yamashita
中科院分区：
文献类型：
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作者：
Masashi Mamada;D. Kumaki;J. Nishida;S. Tokito;Y. Yamashita
醌类化合物具有高的电子亲合势，是一类很有前途的n型有机半导体材料。合成并表征了含醌结构的苯并[1，2-B：4，5-b ']二噻吩-4，8-二酮衍生物，并将其用作有机场效应晶体管的有源层。该衍生物具有深LUMO能级，导致有效的电荷载流子注入和空气稳定性。此外，它形成具有有效的分子间π-π和水平方向相互作用的柱状结构，导致高电子迁移率。事实上，这里制造的OFET器件显示出良好的n型特性，其中在真空条件下电子迁移率为0.15 cm（2）V（-1）s（-1），在空气中高于0.1 cm（2）V（-1）s（-1）。
Quinones are promising moieties for n-type organic semiconductors due to their high electron affinity. Benzo[1,2-b:4,5-b']dithiophene-4,8-dione derivative with a quinone moiety have been synthesized, characterized, and used as active layer of organic field-effect transistors (OFETs). This derivative has deep LUMO level, leading to efficient charge-carrier injection and air stability. In addition, it forms a columnar structure with efficient intermolecular pi-pi and horizontal direction interactions, leading to high electron mobilities. In fact, OFET devices fabricated here showed good n-type characteristics, where the electron mobility was 0.15 cm(2) V(-1) s(-1) under vacuum conditions and above 0.1 cm(2) V(-1) s(-1) in air.