Quantitative analysis of thermal stability of CdSe/CdS core-shell nanocrystals under infrared radiation

Quantitative analysis of thermal stability of CdSe/CdS core-shell nanocrystals under infrared radiation
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DOI:
10.1557/jmr.2006.0170
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发表时间:
2005-05
影响因子:
2.7
通讯作者:
Achintya Singha;A. Roy
Achintya Singha;A. Roy
中科院分区:
材料科学4区
文献类型:
--
作者:
Achintya Singha;A. Roy

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Here, we report investigations on the instability in luminescence of bare (trioctylphosphine oxide [TOPO]-stabilized) and CdS-capped CdSe particles under infrared radiation. During thermal annealing under radiation, the formation of oxide layers on the surfaces of the particles create defect states. Consequently, there is a reduction in particle size. These two effects control the light output from the samples. We make a quantitative comparison of the stability of bare CdSe and core-shell-type CdSe-CdS particles during annealing under infrared radiation. Using diffusion theory, we show that the volume of the oxide layer, adhered to the crystallites, plays a dominant role in controlling the luminosity of the particles.