Opportunities for silicon at mmWave and Terahertz frequencies
Opportunities for silicon at mmWave and Terahertz frequencies
复制标题
毫米波和太赫兹频率硅的机遇
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
H. Roskos
中科院分区：
文献类型：
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作者：
U. Pfeiffer;E. Öjefors;A. Lisauskas;H. Roskos
本文总结了毫米波和太赫兹频率的硅工艺技术的机会，并展示了94 GHz和600 GHz成像阵列的关键构建模块。它回顾了潜在的应用，并总结了最先进的太赫兹技术。用于视频速率成像应用的太赫兹焦平面阵列（FPA）已经分别在商业上可用的CMOS和SiGe工艺技术制造。3 times 5阵列实现了高达50 kV/W的响应度，在600 GHz下的最小NEP为400 pW/radicHz。邮政信封的图像展示了未来低成本太赫兹相机系统的硅集成600 GHz太赫兹FPA的潜力。
This paper summarizes opportunities for silicon process technologies at mmwave and terahertz frequencies and demonstrates key building blocks for 94-GHz and 600-GHz imaging arrays. It reviews potential applications and summarizes state-of-the-art terahertz technologies. Terahertz focal-plane arrays (FPAs) for video-rate imaging applications have been fabricated in commercially available CMOS and SiGe process technologies respectively. The 3times5 arrays achieve a responsivity of up to 50 kV/W with a minimum NEP of 400 pW/radicHz at 600 GHz. Images of postal envelopes are presented which demonstrate the potential of silicon integrate 600-GHz terahertz FPAs for future low-cost terahertz camera systems.
影响因子：
3.8
作者：
Belkin, Mikhail A.;Fan, Jonathan A.;Linfield, Edmund H.
通讯作者：
Linfield, Edmund H.