Refractory In$_{x}$ Ga1−$_{x}$ N Solar Cells for High-Temperature Applications
Refractory In$_{x}$ Ga1−$_{x}$ N Solar Cells for High-Temperature Applications
复制标题
用于高温应用的难熔 In$_{x}$ Ga1−$_{x}$ N 太阳能电池
DOI：
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发表时间：
2017
影响因子：
3
通讯作者：
S. Goodnick
中科院分区：
文献类型：
--
作者：
Joshua J. Williams;H. McFavilen;A. Fischer;D. Ding;Steven Young;E. Vadiee;F. Ponce;C. Arena;C. Honsberg;S. Goodnick
In<italic><inline-formula><tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula></italic>Ga<sub>1−</sub> <italic><inline-formula><tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula></italic>N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In<italic><inline-formula> <tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula></italic>Ga<sub>1−</sub><italic><inline-formula> <tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula></italic>N multiple quantum well solar cells designed for high temperatures. Materials characterization confirms basic optical and physical properties of the layers. External quantum efficiency, dark current–voltage, 1-sun current–voltage, and 300-sun high intensity pulsed solar simulator current–voltage measurements were taken at varied temperatures. Correlations are made between different characterization methods to draw conclusions about device behavior. Photovoltaic performance for <inline-formula><tex-math notation="LaTeX">$V_{{
m{OC}}}$</tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$W_{{
m{OC}}}$</tex-math></inline-formula>, <inline-formula><tex-math notation="LaTeX"> $J_{{
m{SC}}}$</tex-math></inline-formula>, and fill factor is given at multiple temperatures from 25 °C to 600 °C.
In<italic><inline-formula><tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula></italic>Ga<sub>1−</sub> <italic><inline-formula><tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula></italic>N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In<italic><inline-formula> <tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula></italic>Ga<sub>1−</sub><italic><inline-formula> <tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula></italic>N multiple quantum well solar cells designed for high temperatures. Materials characterization confirms basic optical and physical properties of the layers. External quantum efficiency, dark current–voltage, 1-sun current–voltage, and 300-sun high intensity pulsed solar simulator current–voltage measurements were taken at varied temperatures. Correlations are made between different characterization methods to draw conclusions about device behavior. Photovoltaic performance for <inline-formula><tex-math notation="LaTeX">$V_{{
m{OC}}}$</tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$W_{{
m{OC}}}$</tex-math></inline-formula>, <inline-formula><tex-math notation="LaTeX"> $J_{{
m{SC}}}$</tex-math></inline-formula>, and fill factor is given at multiple temperatures from 25 °C to 600 °C.