Short pulse tunneling measurements of the intrinsic Josephson junctions in Bi-Sr-Ca-Cu-O
Short pulse tunneling measurements of the intrinsic Josephson junctions in Bi-Sr-Ca-Cu-O
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Bi-Sr-Ca-Cu-O 中本征约瑟夫森结的短脉冲隧道测量
DOI：
10.1109/77.784027
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发表时间：
1999
影响因子：
1.8
通讯作者：
A. Matsuda
中科院分区：
文献类型：
--
作者：
M. Suzuki;T. Watanabe;A. Matsuda
测量了在Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub 8+/spl delta//晶体表面上制作的本征约瑟夫森结堆的I-V特性。为了减少焦耳加热，这必然发生与这些测量，我们已经减少了在堆栈中的结的数量约为10，然后采用短脉冲测量方法。通过这些措施，可以观察到具有清晰的间隙结构的I-V特性，该间隙结构具有由于电流注入引起的轻微间隙抑制。电压响应分析表明，差距抑制的幅度最大不超过3%。单个结的估计间隙参数为50 mV。
We have measured the I-V characteristics of intrinsic Josephson junction stacks fabricated on the surface of a Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub 8+/spl delta// crystal. In order to reduce the Joule heating, which necessarily occurs associated with these measurements, we have reduced the number of junctions in the stack to approximately 10, and then adopted the short pulse measurement method. With these measures, it becomes possible to observe I-V characteristics which have a clear gap structure with slight gap suppression due to current injection. The voltage response analysis indicates that the magnitude of the gap suppression is no greater than 3% at the maximum. The estimated gap parameter is 50 mV for a single junction.