Magnetotransport properties of mesoscopic graphite spin valves
Magnetotransport properties of mesoscopic graphite spin valves
复制标题
DOI：
10.1103/physrevb.77.020402
复制
发表时间：
2008-01
影响因子：
3.7
通讯作者：
Wei-Hua Wang;K. Pi;Yan Li;Y. Chiang;P. Wei;Jing Shi;R. Kawakami
中科院分区：
文献类型：
--
作者：
Wei-Hua Wang;K. Pi;Yan Li;Y. Chiang;P. Wei;Jing Shi;R. Kawakami
本文报道了由铁磁（FM）电极接触的石墨薄片组成的准二维介观石墨自旋阀器件的磁阻（MR）特性。对于在FM/MG界面插入超薄氧化镁隧道屏障的器件，已经观察到自旋阀效应，MR值高达12%，信号持续到高达12℃的温度。相比之下，自旋阀效应尚未在没有自旋阀的器件中看到，这表明自旋依赖的界面阻力对于自旋注入MG的重要性。此外，还研究了磁流变的电压偏置依赖性和栅极电压依赖性。
We report the magnetoresistance (MR) properties of quasi-two-dimensional mesoscopic graphite (MG) spin valve devices consisting of MG flakes contacted by ferromagnetic (FM) electrodes. For devices in which an ultrathin magnesium oxidetunnel barrier is inserted at the FM/MG interface, the spin valve effect has been observed, with MR magnitudes up to 12% atand signals persisting up to temperatures as high as. In contrast, the spin valve effect has not been seen in devices without, suggesting the importance of spin-dependent interfacial resistance for spin injection into MG. In addition, an investigation of the voltage bias dependence and gate voltage dependence of MR has been performed.