Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point
Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point
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DOI：
10.1103/physrevb.106.165134
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发表时间：
2022-06
影响因子：
3.7
通讯作者：
T. Iwasaki;Y. Morita;Kenji Watanabe;T. Taniguchi
中科院分区：
文献类型：
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作者：
T. Iwasaki;Y. Morita;Kenji Watanabe;T. Taniguchi
我们报道了双门控六方氮化硼(HBN)/双层石墨烯(BLG)超晶格的输运性质。在这里，BLG是没有扭曲的，也就是说，是普通的。本文主要研究平面BLG的电荷中性点(CNP)。在垂直磁场下，通过改变位移场来检测CNP处两个绝缘相之间的转变，并对其电阻-温度特性和磁阻进行了研究。这项工作为探索CNP以外的hBN/BLG超晶格的全局相图开辟了途径。
We report on transport properties in dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Here, BLG is nontwisted, i.e., plain. This paper focuses on the charge neutrality point (CNP) for a plain BLG. Under a perpendicular magnetic field, transitions between two insulating phases at the CNP are detected by varying a displacement field with the study on the resistance-temperature characteristics and the magnetoresistance. This work opens avenues for exploring the global phase diagram of the hBN/BLG superlattices beyond the CNP.