One dimensional electron gas at the LaAlO3/SrTiO3 interface and its transport properties
One dimensional electron gas at the LaAlO3/SrTiO3 interface and its transport properties
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DOI：
10.1063/1.4966546
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发表时间：
2016-10
影响因子：
4
通讯作者：
D. Hong;H. Zhang;H. R. Zhang;J. Zhang;Shufeng Wang;Yu-Biao Chen;B. Shen;J. Sun
中科院分区：
文献类型：
--
作者：
D. Hong;H. Zhang;H. R. Zhang;J. Zhang;Shufeng Wang;Yu-Biao Chen;B. Shen;J. Sun
采用静电纺丝+后退火技术在SrTiO3衬底上制备了LaAlO3纳米线，得到了准一维电子气（q1DEG）. q1DEG具有一维变程跳跃的电子输运特性。可见光照明产生强烈的影响，运输过程中，降低电阻的q1DEG的一个因素高达8。在200 V背栅电压下，150 K和300 K时的门控效应分别为3.2%和1.5%。然而，在光照的辅助下，门控效应被放大35倍，并且电阻不仅在负门控下而且在正门控下增加，这与没有光照的正常门控效应不同。对这些现象给出了可能的解释。
Quasi-one-dimensional electron gases (q1DEGs) have been obtained by fabricating LaAlO3 nanowires, using the technique of electrostatic spinning plus post annealing, above TiO2-terminated SrTiO3 substrate. The q1DEG exhibits an electronic transport behavior of variable range hopping with the one dimension characteristic. Visible light illumination produces a strong effect on transport process, depressing the resistance of the q1DEG by a factor up to 8. As expected, gating effect is weak at relative high temperatures, ∼3.2% at 150 K and 1.5% at 300 K under a back gate of 200 V. Aided by light illumination, however, the gating effect is 35-fold amplified, and the resistance increases under not only negative gates but also positive gates, different from the normal gating effect without illumination. Possible explanations for these phenomena are given.