FAR-INFRARED FREE-HOLE ABSORPTION IN EPITAXIAL SILICON FILMS FOR HOMOJUNCTION DETECTORS
FAR-INFRARED FREE-HOLE ABSORPTION IN EPITAXIAL SILICON FILMS FOR HOMOJUNCTION DETECTORS
复制标题
DOI：
10.1063/1.119595
复制
发表时间：
1997-07
影响因子：
4
通讯作者：
A. Perera;W. Shen;W. C. Mallard;M. Tanner;Kang L. Wang
中科院分区：
文献类型：
--
作者：
A. Perera;W. Shen;W. C. Mallard;M. Tanner;Kang L. Wang
本文报道了采用Si均结界面功函数内光电发射（HIWIP）探测器，外延生长的p型硅薄膜在远红外区（50-200 μm）的自由载流子吸收特性。采用分子束外延法在不同载流子浓度的硅衬底上生长了5种硅薄膜，并将实验吸收数据与计算结果进行了比较。发现自由空穴吸收几乎与被测波长无关。得到了吸收系数与载流子浓度之间的线性回归关系，与理论一致，并用于计算HIWIP探测器的光子吸收概率。
We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region (50–200 μm), where Si homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the measured wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors.